دیتاشیت BUK956R1-100E,127
مشخصات دیتاشیت
نام دیتاشیت | BUK956R1-100E |
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حجم فایل | 337.27 کیلوبایت |
نوع فایل | |
تعداد صفحات | 14 |
دانلود دیتاشیت BUK956R1-100E |
BUK956R1-100E Datasheet |
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مشخصات
- Manufacturer: NXP USA Inc.
- Series: TrenchMOS™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 133nC @ 5V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 17460pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: BUK95
- detail: N-Channel 100V 120A (Tc) 349W (Tc) Through Hole TO-220AB